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Samsung Starts Production of 1 TB eUFS 2.1 Storage for Smartphones

Samsung said it had started a mass production of its eUFS 2.1 storage solution featuring 1 TB capacity for smartphones. Apart from its massive capacity, a SATA SSD. Samsung expects the device to be used by high-end smartphones “soon”.

Samsung's eUFS 2.1 standard 11.5 mm x 13 mm package and is based on a 512 Gb V-NAND flash memory dies as a proprietary controller. The drive is compatible with the UFS 2.1 interface that is relatively widespread these days.

When it comes to performance characteristics, Samsung claims a 1000 MB / s sequential read speed as well as up to 260 MB / s sequential write speed. Random read / write performance of the 58K / 50K of read / write IOPS. The new drive is tangibly faster when it comes to Samsung's previous-generation 512 GB eUFS 2.1 solution, but also higher performance. Obviously, any eUFS 2.1 device is orders of magnitude faster than any microSD card.

What is a bit surprising is the Samsung UFS 3.0 specification that is supported by Samsung's Own Exynos 9820 mobile SoC or will support it shortly).

Samsung's Comparison of Internal NAND Flash Storage
Sequential Read SpeedSequential Write SpeedRandom Read SpeedRandom Write SpeedLaunch Timeframe
Samsung 1 TB eUFS 2.11000 MB / s260 MB / s58K IOPS50 IOPSJanuary 2019
Samsung 512 GB eUFS 2.1860 MB / s255 MB / s42 IOPS40 IOPSNovember 2017
Samsung 256 GB eUFS 2.0850 MB / s260 MB / s45K IOPS40K IOPSFebruary 2016
Samsung 128 GB eUFS 2.0350 MB / s150 MB / s19K IOPS14K IOPSJanuary 2015
Samsung 256 GB UFS Card530 MB / s170 MB / s40K IOPS35K IOPSJuly 2016
EMMC 5.1250 MB / s125 MB / s11K IOPS13K IOPS
eMMC 5.0250 MB / s90 MB / s7K IOPS13K IOPS
EMMC 4.5140 MB / s50 MB / s7K IOPS2K IOPS

Samsung has not disclose pricing of its 1 TB eUFS 2.1 drive, but it will be smartphones featuring the chip.

In addition to announcing its new eUFS 2.1 storage solution for high-end smartphones, Samsung also said it would expand production of its 5th Gen 512 Gb V-NAND memory later in the first half of 2019, which will enable it to boost the efficiency of eUFS drives in general and 1 TB devices in particular.

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Source: Samsung

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