Samsung said it had started a mass production of its eUFS 2.1 storage solution featuring 1 TB capacity for smartphones. Apart from its massive capacity, a SATA SSD. Samsung expects the device to be used by high-end smartphones “soon”.
Samsung's eUFS 2.1 standard 11.5 mm x 13 mm package and is based on a 512 Gb V-NAND flash memory dies as a proprietary controller. The drive is compatible with the UFS 2.1 interface that is relatively widespread these days.
When it comes to performance characteristics, Samsung claims a 1000 MB / s sequential read speed as well as up to 260 MB / s sequential write speed. Random read / write performance of the 58K / 50K of read / write IOPS. The new drive is tangibly faster when it comes to Samsung's previous-generation 512 GB eUFS 2.1 solution, but also higher performance. Obviously, any eUFS 2.1 device is orders of magnitude faster than any microSD card.
What is a bit surprising is the Samsung UFS 3.0 specification that is supported by Samsung's Own Exynos 9820 mobile SoC or will support it shortly).
|Samsung's Comparison of Internal NAND Flash Storage|
|Sequential Read Speed||Sequential Write Speed||Random Read Speed||Random Write Speed||Launch Timeframe|
|Samsung 1 TB eUFS 2.1||1000 MB / s||260 MB / s||58K IOPS||50 IOPS||January 2019|
|Samsung 512 GB eUFS 2.1||860 MB / s||255 MB / s||42 IOPS||40 IOPS||November 2017|
|Samsung 256 GB eUFS 2.0||850 MB / s||260 MB / s||45K IOPS||40K IOPS||February 2016|
|Samsung 128 GB eUFS 2.0||350 MB / s||150 MB / s||19K IOPS||14K IOPS||January 2015|
|Samsung 256 GB UFS Card||530 MB / s||170 MB / s||40K IOPS||35K IOPS||July 2016|
|EMMC 5.1||250 MB / s||125 MB / s||11K IOPS||13K IOPS||–|
|eMMC 5.0||250 MB / s||90 MB / s||7K IOPS||13K IOPS||–|
|EMMC 4.5||140 MB / s||50 MB / s||7K IOPS||2K IOPS||–|
Samsung has not disclose pricing of its 1 TB eUFS 2.1 drive, but it will be smartphones featuring the chip.
In addition to announcing its new eUFS 2.1 storage solution for high-end smartphones, Samsung also said it would expand production of its 5th Gen 512 Gb V-NAND memory later in the first half of 2019, which will enable it to boost the efficiency of eUFS drives in general and 1 TB devices in particular.